CSD87312Q3E 数据手册

CSD87312Q3E

数据手册规格

数据手册名称 CSD87312Q3E
文件大小 835.112 千字节
文件类型 pdf
页数 12

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技术规格

  • Base Part Number: CSD87312
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Package / Case: 8-PowerTDFN
  • Series: NexFET™
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 27A
  • Power - Max: 2.5W
  • Supplier Device Package: 8-VSON (3.3x3.3)
  • Mounting Type: Surface Mount
  • Drain to Source Voltage (Vdss): 30V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
  • Part Status: Active
  • Packaging: Cut Tape (CT)
  • Manufacturer: Texas Instruments
  • FET Feature: Logic Level Gate
  • FET Type: 2 N-Channel (Dual) Common Source
  • detail: Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)

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